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  • Publication Date: December 31, 1969
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    US-8592861-B2November 26, 2013Semiconductor Energy Laboratory Co., Ltd.Display device and manufacturing method of the display device
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    US-8304298-B2November 06, 2012Canon Kabushiki KaishaInverter manufacturing method and inverter
    US-7078274-B2July 18, 2006Sanyo Electric Co., Ltd.Method of forming active matrix type display including a metal layer having a light shield function
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    US-7915058-B2March 29, 2011Semiconductor Energy Laboratory Co., Ltd.Substrate having pattern and method for manufacturing the same, and semiconductor device and method for manufacturing the same
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